Enhanced Ferroelectric Properties of Predominantly (100)-oriented Ca_(0.4)Sr_(0.6)Bi_4Ti_4O_(15) Thin Films on Pt/Ti/SiO_2/Si Substrates  

作　　者：Suhue Fan Quande Che Fengqing Zhang Ran Yu Wei Hu 

机构地区：[1]College of Material Science and Engineering, Shandong Jianzhu University, Jinan 250101, China

出　　处：《Journal of Materials Science & Technology》2010年第11期981-985,共5页材料科学技术（英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant No. 50872075);the Natural Science Foundation of Shandong Province,China(Grant No. Y2007F36)

摘　　要：Predominantly （100）-oriented Ca0.4Sr0.6Bi4Ti4O15 （C0.4S0.6BTi） thin films were prepared on Pt （111）/Ti/SiO2/Si substrates by a sol-gel method at annealing temperatures ranging from 650 to 850 ℃.The growth mode of the predominantly （100）-oriented C0.4S0.6 BTi thin films fabricated by the sequential layer annealing was discussed based on the structure evolution with the annealing temperature.The remnant polarization and coercive field of the C0.4S0.6 BTi film annealed at 800 ℃ are 16.1 μC/cm 2 and 85 kV/cm,respectively.No evident fatigue can be observed after 10 9 switching cycles.Predominantly （100）-oriented Ca0.4Sr0.6Bi4Ti4O15 （C0.4S0.6BTi） thin films were prepared on Pt （111）/Ti/SiO2/Si substrates by a sol-gel method at annealing temperatures ranging from 650 to 850 ℃.The growth mode of the predominantly （100）-oriented C0.4S0.6 BTi thin films fabricated by the sequential layer annealing was discussed based on the structure evolution with the annealing temperature.The remnant polarization and coercive field of the C0.4S0.6 BTi film annealed at 800 ℃ are 16.1 μC/cm 2 and 85 kV/cm,respectively.No evident fatigue can be observed after 10 9 switching cycles.

关 键 词：Ca0.4Sr0.6Bi4Ti4O15 Ferroelectric film ORIENTATION 

分 类 号：TN304.21[电子电信—物理电子学] O484.1[理学—固体物理]