Nd:GdVO_4/Cr:YAG微片式脉冲激光器  

Nd:GdVO_4/Cr:YAG Microchip Pulse Laser

作　　者：廖明墩[1] 王正平[1] 于浩海[1] 张怀金[1] 陈丽娟[1] 庄士栋[1] 郭磊[1] 赵永光[1] 王继扬[1] 许心光[1] 

机构地区：[1]山东大学晶体材料国家重点实验室,山东济南250100

出　　处：《中国激光》2010年第12期2954-2957,共4页Chinese Journal of Lasers

基　　金：国家自然科学基金(60978027);中国博士后科学基金(200904501184);山东省自然科学基金(ZR2009FM015);山东省博士后创新基金(200802029);111引智计划;山东省泰山学者计划资助课题

摘　　要：以Cr：YAG作为可饱和吸收体,实现了激光二极管（LD）端面抽运Nd：GdVO4晶体的微片式被动调Q激光器。Nd：GdVO4晶体的尺寸为3 mm×3 mm×1 mm,a向切割,Nd3＋掺杂原子数分数为0.5%,抽运端面镀有对808 nm增透和对1.06μm高反的双色膜,作为激光谐振腔的输入镜。Cr4＋：YAG的尺寸为9.5 mm×1.1 mm,初始透射率为77%,其外端面镀有对1.06μm透射率为15%的部分反射膜,作为激光谐振腔的输出镜。谐振腔的长度为5~6 mm。激光的抽运阈值为4.62 W,当抽运功率为13.86 W时,最大平均输出功率为0.98 W,相应的光光转换效率为7%,斜率效率为9.5%,最高重复频率、最大单脉冲能量和最短脉冲宽度分别为23.4 kHz,44.6μJ和2.9 ns,相应的峰值功率为15.4 kW。With Cr：YAG as the saturable absorber,passively Q-switched microchip laser is obtained by laser diode（LD） end-pumped Nd：GdVO4 crystal.The Nd：GdVO4 crystal is a-cut with the size of 3 mm×3 mm×1 mm,and the atom fraction of Nd3＋ ions is 0.5%.The pump end face of Nd：GdVO4 crystal is anti-reflective coated for 808 nm and high-reflective coated for 1.06 μm,which serves as the input mirror of laser cavity.The size of Cr4＋：YAG is 9.5 mm×1.1 mm,the initial transmission is 77%,and its outer end face is partially reflective coated for 1.06 μm（T=15%）,which serves as the output mirror of laser cavity.The total length of laser cavity is 5~6 mm.The pump threshold of the laser is 4.62 W.When the pump power reaches 13.86 W,a maximum average output power of 0.98 W is obtained,corresponding to optical conversion efficiency of 7%,and slope efficiency of 9.5%.The highest repetition rate,largest pulse energy and shortest pulse width are measured to be 23.4 kHz,44.6 μJ,and 2.9 ns respectively,corresponding to peak power of 15.4 kW.

关 键 词：激光器 ND:GDVO4晶体 Cr:YAG晶体 微片 被动调Q 

分 类 号：TN248.1[电子电信—物理电子学]