Channel Temperature Measurement of AlGaN/GaN HEMTs by Forward Schottky Characteristics  

作　　者：ZHANG Guang-Chen FENG Shi-Wei HU Pei-Feng ZHAO Yan GUO Chun-Sheng XU Yang CHEN Tang-Sheng JIANG Yi-Jian 

机构地区：[1]School of Electronic Information & Control Engineering, Beijing University of Technology, Beijing 100124 [2]Institute of Laser Engineering, Beijing University of Technology, Beijing 100124 [3]Nanjing Electronic Devices Institute, Nanjing 210016

出　　处：《Chinese Physics Letters》2011年第1期171-174,共4页中国物理快报（英文版）

摘　　要：Channel temperature measurements of multi-finger AlGaN/OaN HEMTs by forward Schottky characteristics are presented. The temperature dependence of the forward gate-source Schottky junction voltage is investigated and it is used as the temperature sensitive parameter （TSP） by pulsed switching technique. The channel-to-mounting thermal resistance of the tested AlGaN/GaN HEMT sample is 19.6°C/W. Compared with both the measured results by micro-Raman method and simulated results of a three-di^nensional heat conduction model, the physical meaning of the channel temperature for AIGaN/GaN HEMT tested by pulsed switching electrical TSP method is investigated quantitatively for the first time.Channel temperature measurements of multi-finger AlGaN/OaN HEMTs by forward Schottky characteristics are presented. The temperature dependence of the forward gate-source Schottky junction voltage is investigated and it is used as the temperature sensitive parameter （TSP） by pulsed switching technique. The channel-to-mounting thermal resistance of the tested AlGaN/GaN HEMT sample is 19.6°C/W. Compared with both the measured results by micro-Raman method and simulated results of a three-di^nensional heat conduction model, the physical meaning of the channel temperature for AIGaN/GaN HEMT tested by pulsed switching electrical TSP method is investigated quantitatively for the first time.

分 类 号：TN386[电子电信—物理电子学] TN304.23