A 1100＋ V A1GaN/GaN-Based Planar Schottky Barrier Diode without Edge Termination  

作　　者：CAO Dong-Sheng LU Hai CHEN Dun-Jun HAN Ping ZHANG Rong ZHENG You-Dou 

机构地区：[1]Nanjing National Laboratory of Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 [2]National Key Laboratory of Monolithic Circuits and Modules, Nanjing Electron Devices Institute, Nanjing 210016

出　　处：《Chinese Physics Letters》2011年第1期182-185,共4页中国物理快报（英文版）

基　　金：Supported by the National Basic Research Program of China under Grant No 2006CB921803 and 20100B327504, the National Natural Science Foundation of China under Grant Nos 60825401, 60806026, 60936004 and 60721063, and the New Century Excellent Talent Project （NCET） of the Ministry of Education of China under Grant No 07-0417.

摘　　要：AlGaN/GaN-based planar Schottky barrier diodes with various spacings between ohmic and Schottky contacts are fabricated without any edge termination. The reverse leakage current of the devices quickly saturates at low reverse bias when the two-dimensional electron gas （2DEG） at the AIGaN/GaN interface is fully depleted. The corresponding breakdown voltage is found to follow a linear dependence on contact spacing and exceeds 1100 V at a contact spacing of 20Jim, yielding a high V2BR/Rox value of 〉 280 MW.em-2. The observations are tentatively explained by a ＂natural super-junetion＂ theory, in whieh ionized surface stgtes at front surface of the AIGaN barrler have to be neutralized by revenqe surface leakage current from the Sehottky electrode.AlGaN/GaN-based planar Schottky barrier diodes with various spacings between ohmic and Schottky contacts are fabricated without any edge termination. The reverse leakage current of the devices quickly saturates at low reverse bias when the two-dimensional electron gas （2DEG） at the AIGaN/GaN interface is fully depleted. The corresponding breakdown voltage is found to follow a linear dependence on contact spacing and exceeds 1100 V at a contact spacing of 20Jim, yielding a high V2BR/Rox value of 〉 280 MW.em-2. The observations are tentatively explained by a ＂natural super-junetion＂ theory, in whieh ionized surface stgtes at front surface of the AIGaN barrler have to be neutralized by revenqe surface leakage current from the Sehottky electrode.

分 类 号：TN311.7[电子电信—物理电子学] O182.2[理学—数学]