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作 者:唐安江[1] 韦德举[1] 高珊珊[1] 关星宇[1]
机构地区:[1]贵州大学,贵州贵阳550003
出 处:《无机盐工业》2010年第12期57-59,共3页Inorganic Chemicals Industry
摘 要:介绍了四氟化硅气体中几类杂质的检测方法,主要包括气相色谱法、傅里叶变换红外光谱法、质谱法和微波波谱法。用气相色谱仪可以检测出四氟化硅中气体中C1-C4碳氢化合物;用高分辨率傅里叶变换红外光谱仪可以检测出SiF3OH,HF,SiF3H,SiF2H2,SiH3F,CO2,CO等气体杂质;用微波波谱仪可以检测出四氟化硅中CHF3,CH2F2,CH3F等气体杂质;用质谱仪可以检测出四氟化硅中SiF3H,SiF2H2,SiF3OSiF3等气体杂质。通过对比得出每种检测方法的优点和缺点。Detecting methods,including gas chromatography,Fourier transform infrared spectroscopy,mass spectrometry,and microwave spectroscopy,for several kinds of impurity in silicon tetrafluoride gas were introduced respectively.Gas chromatograph can detect C1~C4 hydrocarbons in silicon tetrafluoride gas;high-resolution Fourier transform infrared spectrometer can detect the impurity gases,such as SiF3OH,HF,SiF3H,SiF2H2,SiH3F,CO2 and CO;microwave spectrometer can detect the impurity gases,such as CHF3,CH2F2,and CH3F;and mass spectrometer can detect the impurity gases,such as SiF3H,SiF2H2,SiF3,and OSiF3.Advantages and disadvantages of each detecting method were found out by comparison at last.
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