共溅射磁控溅射法制备AlN:Er薄膜的XPS和PL研究  

Studies of XPS and PL in the Preparation of Er Doped AIN Film by Using Co - sputtering Magnetron Sputtering Method

作　　者：胡亚华[1] 张勇[1] 

机构地区：[1]嘉兴学院机电工程学院,浙江嘉兴314001

出　　处：《嘉兴学院学报》2010年第6期49-52,共4页Journal of Jiaxing University

摘　　要：采用共溅射磁控溅射方法,以Al+Er为靶材,通过Er和Al靶的面积比来控制Er在AlN中的含量,在Si衬底上制备出AlN:Er薄膜.XRD分析结果表明,样品为非晶态.XPS分析结果表明,制备的AlN具有良好的化学计量比,Er的含量被控制在1atm%左右,氧不可避免.光致发光光谱的测试表明,样品的PL光谱呈现宽谱之上叠加尖峰谱的特征.其中,尖荧光峰谱源于Er^(3+)的4f轨道直接激发跃迁;而宽谱则可能与Er^(3+)的4f轨道的间接激发跃迁和O杂质有关.Er^3＋ doped AlN films are prepared by means of co - sputtering magnetron sputtering on silicon substrate. High pure Al and Er are used as target materials and N2, Ar are used as sputtering gas and the concentration of Er in AlN film is controlled by varying area rations of Er and Al targets. XRD analysis shows that the film is amorphous. XPS indicates that the film has a favorable stoichiometric ratio and the concentration of Er is about 1 atm %. It is difficult to avoid the impurities of oxygen completely. The PL spectroscopy is featured by two broad bands with a number of sharp peaks superimposed on them. The sharp PL peaks can be attributed to the direct intra - 4f excitation of Er^3＋ ions, whereas, the broad bands are related to an indirect carrier- mediated process and ON defects.

关 键 词：共溅射磁控溅射 AlN:Er XPS PL 

分 类 号：TB43[一般工业技术]