单片集成电吸收调制分布反馈激光器  

Monolithically integrated and electro-absorption modulated DFB lasers

作　　者：朱洪亮[1] 梁松[1] 李宝霞[1] 赵玲娟[1] 王宝军[1] 边静[1] 许晓冬[1] 朱小宁[1] 王圩[1] 

机构地区：[1]中国科学院半导体研究所半导体材料科学重点实验室,北京100083

出　　处：《光电子．激光》2011年第1期13-15,共3页Journal of Optoelectronics·Laser

基　　金：国家"863"计划资助项目(2007AA03Z417;2007AA03Z419;2009AA03Z442);国家自然科学基金资助项目(60706009;60777021);国家"973"计划资助项目(2006CB604901;2006CB604902)

摘　　要：提出一种选择区域外延双有源区叠层(SAG-DSAL)结构新技术,基于此技术设计研制了单片集成电吸收调制激光器(EML),SAG-DSAL-EML管芯的阈值电流为20 mA,工作电流为100 mA时的出光功率为10 mW,由吸收调制器(EAM)加-3 V偏压时的消光比为12 dB,实现了简化制作工艺并提高器件性能的预期目的,有望用于规模化生产。It is desirable to simplify process,lower cost and improve characteristics of the integrated optoelectronic functional devices.A novel technique named as selective area growth double stacked active layer（SAG-DSAL） was introduced.A monolithically integrated and electro-absorption modulated distributed feedback laser was developed with this technique.The SAG-DSAL electro-absorption modulated laser（EML） chip′s threshold current is 20 mA,optical output power is 10 mW at an injection current of 100 mA,and the extinction ratio is 12 dB when the bias voltage on the modulator is-3 V.It′s expected to use this technique for mass production.

关 键 词：选择区域生长(SAG) 双有源区叠层(DSAL) 电吸收调制激光器(EML) 

分 类 号：TN256[电子电信—物理电子学]