薄膜衬底电极CNT阴极制备及场发射性能研究  

Fabrication and field emission properties of CNT cathodes on thin-film substrate electrodes

作　　者：汤巧治[1] 叶芸[1] 游玉香[1] 苏艺菁[1] 张杰[1] 郭太良[1] 

机构地区：[1]福州大学物理与信息工程学院,福建福州350002

出　　处：《光电子．激光》2011年第1期30-33,共4页Journal of Optoelectronics·Laser

基　　金：国家"863"重大研究专项资助项目(2008AA03A313);福建省自然科学基金人才基金资助项目(2009J05145);福建省教育厅科研资助项目(JA08005)

摘　　要：采用电泳沉积(EPD,electrophoretic deposition)法在不同薄膜衬底电极上制备碳纳米管(CNT,carbon nanotube)场发射阴极。采用场发射扫描电子显微镜(FESEM)对其进行表面形貌表征,结果表明,EPD可以制得CNT均匀分布的场发射阴极。场发射测试结果表明衬底电极对CNT阴极的场发射性能有影响,分别选取CrCuCr金属复合薄膜和ITO透明导电薄膜作为衬底电极,其CNT阴极的开启电场分别为0.51和0.81 V/m;当阳流密度达到0.7 mA/cm2时,其阳极屏的发光亮度分别为995和834 cd/m2;CrCuCr-CNT阴极的开启电场较低,其电流密度可以稳定地达到0.9 mA/cm2以上,场发射性能相对较好。根据CNT与衬底电极接触的双势垒模型,对CNT阴极场发射性能进行了原因分析。The carbon nanotube（CNT） field emission cathodes based on different thin film substrate electrodes are prepared by electrophoretic deposition（EPD）.The morphologies of CNT cathodes after being sintered under high temperature are observed by field emission scanning electron microscope（FESEM）,which show that CNTs are uniformly distributed on the substrate electrodes.The field emission properties of CNT cathodes are influenced by substrate electrode materials obviously.The turn-on electric field of the CNT cathode on CrCuCr thin film is 0.51 V/μm,and that on ITO transparent thin film is 0.81 V/μm.When the anode current density is 0.7 mA/cm2,the brightness luminosity of CrCuCr-CNT cathode is 995 cd/m2,and that of ITO-CNT cathode is 834 cd/m2.It can be indicated that the property of CNT cathode on CrCuCr thin film is quite well,for its turn-on electric field is lower and its current density can be 0.9 mA/cm2 stably.At last,the field emission properties are analyzed by the model of double-potential barrier for the contact between CNT and the substrate electrodes.

关 键 词：碳纳米管(CNT) 电泳沉积(EPD) 场发射 衬底电极 双势垒 

分 类 号：O462.4[理学—电子物理学]