Internal quantum efficiency drop induced by the heat generation inside of light emitting diodes (LEDs)  

作　　者：陈依新 沈光地 郭伟玲 徐晨 李建军 

机构地区：[1]Beijing Optoelectronic Technology Laboratory,Beijing University of Technology

出　　处：《Chinese Physics B》2011年第1期562-565,共4页中国物理B（英文版）

基　　金：Project supported by the National High Technology Research and Development Program of China(Grant No.2006AA03A121);the National Basic Research Program of China(Grant No.2006CB604900)

摘　　要：The reasons for low output power of AlGalnP Light Emitting Diodes （LEDs） have been analysed. LEDs with AlGaInP material have high internal but low external quantum efficiency and much heat generated inside especially at a large injected current which would reduce both the internal and external quantum efficiencies. Two kinds of LEDs with the same active region but different window layers have been fabricated. The new window layer composed of textured 0.5 μm GaP and thin Indium-Tin-Oxide film has shown that low external quantum efficiency （EQE） has serious impaction on the internal quantum efficiency （IQE）, because the carrier distribution will change with the body temperature increasing due to the heat inside, and the test results have shown the evidence of LEDs with lower output power and bigger wavelength red shift.The reasons for low output power of AlGalnP Light Emitting Diodes （LEDs） have been analysed. LEDs with AlGaInP material have high internal but low external quantum efficiency and much heat generated inside especially at a large injected current which would reduce both the internal and external quantum efficiencies. Two kinds of LEDs with the same active region but different window layers have been fabricated. The new window layer composed of textured 0.5 μm GaP and thin Indium-Tin-Oxide film has shown that low external quantum efficiency （EQE） has serious impaction on the internal quantum efficiency （IQE）, because the carrier distribution will change with the body temperature increasing due to the heat inside, and the test results have shown the evidence of LEDs with lower output power and bigger wavelength red shift.

关 键 词：AlGaInP light emitting diodes internal quantum efficiency HEAT light power 

分 类 号：TN312.8[电子电信—物理电子学]