Investigation of resistive switching behaviours in WO_3-based RRAM devices  

作　　者：李颖弢 龙世兵 吕杭炳 刘琦 王琴 王艳 张森 连文泰 刘肃 刘明 

机构地区：[1]Institute of Microelectronics,School of Physical Science and Technology,Lanzhou University [2]Laboratory of Nano-Fabrication and Novel Devices Integrated Technology,Institute of Microelectronics,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2011年第1期589-595,共7页中国物理B（英文版）

基　　金：Project supported by the National Basic Research Program of China(Grant Nos.2008CB925002 and 2010CB934200);the National Natural Science Foundation of China(Grant Nos.60825403 and 50972160);the National High Technology Research and Development Program of China(Grant No.2009AA03Z306)

摘　　要：In this paper, a WO3-based resistive random access memory device composed of a thin film of WO3 sandwiched between a copper top and a platinum bottom electrodes is fabricated by electron beam evaporation at room temperature. The reproducible resistive switching, low power consumption, multilevel storage possibility, and good data retention characteristics demonstrate that the Cu/WO3/Pt memory device is very promising for future nonvolatile memory applications. The formation and rupture of localised conductive filaments is suggested to be responsible for the observed resistive switching behaviours.In this paper, a WO3-based resistive random access memory device composed of a thin film of WO3 sandwiched between a copper top and a platinum bottom electrodes is fabricated by electron beam evaporation at room temperature. The reproducible resistive switching, low power consumption, multilevel storage possibility, and good data retention characteristics demonstrate that the Cu/WO3/Pt memory device is very promising for future nonvolatile memory applications. The formation and rupture of localised conductive filaments is suggested to be responsible for the observed resistive switching behaviours.

关 键 词：resistive random access memory resistive switching NONVOLATILE WO3 

分 类 号：O482.4[理学—固体物理] TP333[理学—物理]