Performance improvement in pentacene organic thin film transistors by inserting a C_(60) ultrathin layer  

作　　者：孙钦军 徐征 赵谡玲 张福俊 高利岩 

机构地区：[1]Institute of Optoelectronics Technology,Beijing Jiaotong University,Beijing 100044,China Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University),Ministry of Education

出　　处：《Chinese Physics B》2011年第1期596-600,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.10774013,10974013,60978060 and 10804006);the Research Fund for the Doctoral Program of Higher Education,China(Grant Nos.20090009110027,20070004024 and 20070004031);the Beijing Municipal Science and Technology Commission(Grant No.1102028);the National Basic Research Program of China(Grant No.2010CB327704)

摘　　要：The contact effect on the performances of organic thin film transistors is studied here. A C60 ultrathin layer is inserted between Al source-drain electrode and pentacene to reduce the contact resistance. By a 3 nm C60 modification, the injection barrier is lowered and the contact resistance is reduced. Thus, the field-effect mobility increases from 0.12 to 0.52 cm2/（V.s）. It means that inserting a C60 ultra thin layer is a good method to improve the organic thin film transistor （OTFT） performance. The output curve is simulated by using a charge drift model. Considering the contact effect, the field effect mobility is improved to 1.15 cm2/（V-s）. It indicates that further reducing the contact resistance of OTFTs should be carried out.The contact effect on the performances of organic thin film transistors is studied here. A C60 ultrathin layer is inserted between Al source-drain electrode and pentacene to reduce the contact resistance. By a 3 nm C60 modification, the injection barrier is lowered and the contact resistance is reduced. Thus, the field-effect mobility increases from 0.12 to 0.52 cm2/（V.s）. It means that inserting a C60 ultra thin layer is a good method to improve the organic thin film transistor （OTFT） performance. The output curve is simulated by using a charge drift model. Considering the contact effect, the field effect mobility is improved to 1.15 cm2/（V-s）. It indicates that further reducing the contact resistance of OTFTs should be carried out.

关 键 词：organic thin film transistors field effect mobility contact effect charge drift 

分 类 号：TN321.5[电子电信—物理电子学] O613.71[理学—无机化学]