Multifunctional silicon-based light emitting device in standard complementary metal oxide semiconductor technology  

作　　者：王伟 黄北举 董赞 陈弘达 

机构地区：[1]State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2011年第1期677-683,共7页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.60536030,61036002,60776024,60877035 and 61036009);National High Technology Research and Development Program of China(Grant Nos.2007AA04Z329 and 2007AA04Z254)

摘　　要：A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit visible to near infra-red （NIR） light （the spectrum ranges from 500 nm to 1000 nm） in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light （the spectrum ranges from 900 nm to 1300 nm） in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit visible to near infra-red （NIR） light （the spectrum ranges from 500 nm to 1000 nm） in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light （the spectrum ranges from 900 nm to 1300 nm） in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.

关 键 词：optoelectronic integrated circuit complementary metal-oxide-semiconductor technology silicon-based light emitting device ELECTROLUMINESCENCE 

分 类 号：TN383.1[电子电信—物理电子学]