InP-based evanescently coupled high-responsivity photodiodes with extremely low dark current density integrated diluted waveguide at 1550 nm  

作　　者：左玉华 曹权 张云 张岭梓 郭剑川 薛春来 成步文 王启明 

机构地区：[1]State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2011年第1期684-688,共5页中国物理B（英文版）

基　　金：Project supported by the National High Technology Research and Development Program of China(Grant No.2006CB302802)

摘　　要：In this paper, we have demonstrated a high performance waveguide photodiode integrated diluted waveguide serving as a fibre-to-waveguide coupler to achieve high coupling efficiency. High responsivity （〉 1 A/W）, high saturation power （〉 45 mA） in the static state and extremely low dark current density （0.04 pA/μm2） with 3 dB bandwidth at 13.4 GHz have been achieved.In this paper, we have demonstrated a high performance waveguide photodiode integrated diluted waveguide serving as a fibre-to-waveguide coupler to achieve high coupling efficiency. High responsivity （〉 1 A/W）, high saturation power （〉 45 mA） in the static state and extremely low dark current density （0.04 pA/μm2） with 3 dB bandwidth at 13.4 GHz have been achieved.

关 键 词：high responsivity diluted waveguide evanescent coupling waveguide photodiode 

分 类 号：TN364.2[电子电信—物理电子学] V443.4[航空宇航科学与技术—飞行器设计]