硅基拉曼放大器增益的理论分析  

Theoretical analysis on gain characteristics of silicon Raman amplifiers

作　　者：刘组学[1] 冯鸣[1] 郭清华[1] 乔丽[1] 吕可诚[1] 

机构地区：[1]弱光非线性光子学教育部重点实验室,南开大学物理学院,天津300071

出　　处：《物理学报》2011年第1期312-316,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60708001);高等学校博士点基金新教师项目(批准号:20070055082)资助的课题~~

摘　　要：提出了硅波导中受激拉曼散射信号光获得正增益的理论分析方法,并对关键参量自由载流子寿命和抽运光功率做了分析,得到了可以获得正增益的自由载流子寿命阈值公式,抽运光功率阈值.研究了抽运方式对于硅基拉曼放大器增益的影响,并指出采用双向抽运方式可以使拉曼增益大大提高.We report the new theoretical analysis method to obtain net gain in silicon waveguide by stimulated Raman scattering, and the key parameters of the free carrier lifetime and the pump light intensity are analyzed. The free carrier lifetime threshold and pump light intensity threshold are deduced. The gain characteristics of silicon Raman amplifiers with different pumping schemes are investigated,and the results show that the gain can be significantly enhanced in the bidirectional pump scheme.

关 键 词：硅基放大器 拉曼放大器 抽运方式 

分 类 号：O437.4[机械工程—光学工程]