一维掺杂光子晶体带隙结构的研究  

On Band-gap Structure of One-dimensional Doped Photonic Crystal

作　　者：郭立帅[1] 付文羽[1] 

机构地区：[1]陇东学院物理与电子工程学院,甘肃庆阳745000

出　　处：《延安大学学报（自然科学版）》2010年第4期51-54,57,共5页Journal of Yan'an University：Natural Science Edition

摘　　要：基于传输矩阵法,数值研究了掺杂一维光子晶体带隙特征。研究表明:一维掺杂光子晶体的带隙是由光子晶体结构决定的,不掺杂时,禁带中心无导带;当掺杂时,禁带中心位置出现一个极窄的导带,并且导带深度随着掺杂位置的不同而变化,当掺杂位置一定时,改变杂质层的折射率,发现随着折射率的变化,禁带中心的导带深度也会随折射率变化而变化,这样我们可以根据晶体的结构,适当选择掺杂位置和杂质折射率,就会在禁带中心出现一个极深的导带,一维光子晶体的这种特性可应用于滤波器件和光学谐振腔的设计。The properties of band-gap of one-dimensional doped photonic crystal are studied by using numerically method based on the Transfer Matrix Method.The result shows that the band-gap of one-dimensional doped photonic crystal is decided by the photonic crystal structure.There is no conduction band in the centre of forbidden band when no impurities are doped in the photonic crystal.A narrow conduction band appears in the centre of forbidden band when impurities are doped in the photonic crystal,and the depth of conduction band versus the position where impurities are doped,the depth of conduction band also versus the index of refraction of impurities when the doped position is given.A very wide of conduction band in the centre of forbidden band can be obtained by selecting a suitable doped position and the index of refraction of impurities.Such characters of one-dimensional photonic crystal can be applied to design filter and optical resonant cavity.

关 键 词：物理光学 传输矩阵法 一维光子晶体 光子带隙结构 

分 类 号：O434[机械工程—光学工程]