拉曼散射和X射线衍射研究In_xGa_(1-x)As材料  

Study of InxGa1-xAs by Raman Scattering and X-ray Diffraction

作　　者：张铁民[1] 缪国庆[2] 傅军[1] 符运良[1] 王林茂[1] 洪丽[1] 

机构地区：[1]海南师范大学物理与电子工程学院,海南海口571158 [2]中国科学院激发态物理重点实验室,吉林长春130033

出　　处：《海南师范大学学报（自然科学版）》2010年第4期379-382,共4页Journal of Hainan Normal University（Natural Science）

基　　金：海南省教育厅高等学校科研基金项目(Hjkj2010-21);国家自然科学基金重点项目(50132020);海南省自然科学基金项目(609002);海南师范大学学科建设基金项目(0020303020317)

摘　　要：使用低压金属有机化学气相淀积(LP-MOCVD)技术,在InP(100)衬底上生长InxGa1-xAs材料.拉曼散射研究材料的结构无序和计算材料的应力,X射线衍射研究InxGa1-xAs的组分、结晶质量、位错密度.拉曼散射可以获得材料表面特性,X射线衍射可以获得材料整体结构信息,即衬底质量,缓冲层的特性,外延层特性.InxGa1-xAs was grown on InP substrates by LP-MOCVD.The disorder of structure was characterized by the symmetry ratio（Γa/Γb） of GaAs-like LO phonon and the evaluation of stress in InxGa1-xAs was made from frequency shift of the GaAs-like LO phonon of the Raman spectrum.The In content and crystalline quality were analyzed,and dislocations of InxGa1-xAs was characterized by X-ray diffraction.The properties of shin film characterized by Raman scattering were better than that by X-ray diffraction.But X-ray diffraction is effective to investigate the whole materials,including substrate,buffer,and epilayer.

关 键 词：INXGA1-XAS 拉曼散射 X射线衍射 

分 类 号：O471.1[理学—半导体物理]