GH4033基材相对稀释率的仿真研究  

Simulation on Substrate Relative Dilution Ratio for GH4033

作　　者：陈刚[1] 黎向锋[1] 左敦稳[1] 王宏宇[1,2] 张敏[1] 

机构地区：[1]南京航空航天大学机电学院,江苏南京210016 [2]江苏大学机械工程学院,江苏镇江212013

出　　处：《激光与光电子学进展》2011年第1期100-104,共5页Laser & Optoelectronics Progress

基　　金：南京航空航天大学研究生创新基地(实验室)开放基金(200902011);航空科学基金(2010ZE52056)资助课题

摘　　要：在研究多道激光熔覆稀释率时提出基材相对稀释率概念及其计算公式,并从冷却时间、搭接中心偏距和搭接率研究第一道对第二道的热效应以及基材相对稀释率。结果表明,GH4033在自然冷却情况下需要经历较长的冷却时间(360s)才能明显减小第一道对第二道的热效应,基材相对稀释率才会接近0;搭接中心偏距越大,基材相对稀释率越小;多道激光熔覆比较理想的搭接率为50%。The concept of relative dilution ratio of the substrate and its calculation formula are suggested in studying multi-pass laser cladding dilution ratio. And the heat effects of the first pass on the second pass and relative dilution ratio of the substrate are discussed in the respective of the cooling time, overlapping center offset and overlapping ratio. For the GH4033 substrate, it takes 360 s to decrease the heat effect of the first pass on the second pass markedly and to make relative dilution ratio of the substrate near to zero. The larger the overlapping center offset, the less the relative dilution ratio of the substrate is. Overlapping ratio of 50% is appropriate for multi-pass laser cladding.

关 键 词：激光技术 多道激光熔覆 稀释率 有限元 GH4033 涂层 

分 类 号：TF124.85[冶金工程—粉末冶金]