激光溅射沉积制备的ZnO∶Ga薄膜表面形貌分析  

Morphology Analysis of ZnO∶Ga Thin Films Deposited by Pulsed Laser Deposition

作　　者：刘云燕[1,2] 程传福[1] 宋洪胜[1] 臧永丽[2] 杨善迎[1,3] 

机构地区：[1]山东师范大学物理与电子科学学院,山东济南250015 [2]山东理工大学理学院,山东淄博255049 [3]莱芜职业技术学院信息工程系,山东莱芜271100

出　　处：《光学学报》2011年第1期272-276,共5页Acta Optica Sinica

基　　金：国家自然科学基金(10874105;10974122);山东省自然科学基金(ZR2009FZ006)资助课题

摘　　要：薄膜表面形貌定量研究有助于薄膜生长机理的认识。研究的薄膜是用激光脉冲沉积法(PLD)制备的ZnO∶Ga(GZO)透明导电薄膜。由于GZO薄膜的生长是在远离平衡态情况下实现的,具备自仿射分形特征,可以用高度-高度相关函数进行描述。通过对用原子力显微镜(AFM)获得的表面高度数据进行相关运算,定量地分析了PLD制备的GZO薄膜的生长界面特征,求出了描述粗糙表面的高度-高度相关函数的三个重要参量W,ξ和α,发现制备的GZO薄膜生长符合Kuromoto-Sivashinsky生长模型。The quantitative study on the film surface morphology is important for the understanding of thin film growth mechanism.The ZnO∶Ga（GZO） transparent conductive film is prepared by pulsed laser deposition（PLD）.Since this GZO film growth is far from equilibrium,the GZO film has self-affine fractal characteristics and can be described by height-height correlation function H（r,r＋ρ）.By using atomic force microscope to get the height data of the surface image,the quantitative analysis of height-height correlation function of the GZO film prepared by PLD is carried out.The values of the three important parameters W,ξ and α are measured and it is suggested that the growth of GZO thin film is consistent with Kuromoto-Sivashinsky growth model.

关 键 词：薄膜 ZNO:GA 原子力显微镜 高度-高度相关函数 表面形貌 

分 类 号：O484.1[理学—固体物理]