射频磁控溅射法制备La_(0.9)Sr_(0.1)Ga_(0.8)Mg_(0.2)O_(3-δ)电解质薄膜的研究  

Preparation and characterization of La_(0.9)Sr_(0.1)Ga_(0.8)Mg_(0.2)O_(3-δ) thin film deposited by RF magnetron sputtering

作　　者：孙红燕[1,2] 马文会[1,2] 陈秀华[3] 于洁[1,2] 林航昇[1,2] 

机构地区：[1]真空冶金国家工程实验室,云南昆明650093 [2]昆明理工大学冶金与能源工程学院,云南昆明650093 [3]云南大学物理科学技术学院,云南昆明650091

出　　处：《功能材料》2011年第1期63-66,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(50204007);云南省中青年学术带头人后备人才资助项目(2005PY01-33);教育部新世纪优秀人才支持计划资助项目(NCET-07-0387)

摘　　要：采用射频磁控溅射法成功地在多孔La0.7Sr0.3Cr0.5Mn0.5O3-δ(LSCM7355)阳极基底上制备了致密的LSGM电解质薄膜层。研究结果表明,当溅射功率为210W、基底温度为300℃、溅射气氛氩气压强为5Pa、溅射时间为12h,得到表观形貌较好、厚度约为10μm的LSGM电解质薄膜。在1000℃空气气氛中退火2h后,电解质薄膜物相结构符合多晶态钙钛矿型结构。A dense and crack-free La0.9Sr0.1Ga0.8Mg0.2O3-δ thin film has been prepared by RF magnetron sputtering method on porous LSCM7355 anode substrates.The film with the good apparent morphology and a thickness about 10μm was obtained when the operating parameters fixed as follows： the sputtering power is 210W,the temperature of substrates is 300℃,the sputtering pressure is 5Pa and the sputtering time span is 12h.The polycrystalline perovskite type structure was obtained after the film annealed at 1000℃ for 2h in air.

关 键 词：固体氧化物燃料电池 LSGM RF磁控溅射 薄膜 

分 类 号：TB34[一般工业技术—材料科学与工程]