不同靶间距下非晶态碲镉汞薄膜生长及厚度均匀性研究  

Growth and Thickness Uniformity Research of Amorphous MCT Films under Different Target Spacings

作　　者：杨丽丽[1] 王光华[1] 孔金丞[1] 李雄军[1] 孔令德[1] 余连杰[1] 李凡[1] 邓功荣[1] 姬荣斌[1] 

机构地区：[1]昆明物理研究所,云南昆明650023

出　　处：《红外技术》2011年第1期13-16,共4页Infrared Technology

基　　金：国家自然科学基金项目(项目编号:60576069)

摘　　要：采用射频磁控溅射法在不同靶间距下生长非晶态碲镉汞薄膜并研究其生长速率、择优取向及厚度均匀性。实验结果表明随着靶间距减小及溅射功率增加生长速率增大;不同靶间距下Hg1-xCdxTe薄膜结晶特性差距较大,择优取向为(111)方向;增大靶间距能够有效地提高薄膜厚度均匀性,75 mm靶间距时,50 mm×60 mm及10 mm×10 mm范围内厚度均匀性分别优于7%和1%。Uses the Radio Frequency （RF） Magnetron Sputtering method to grow the amorphous HgCdTe thin films under different target spacings and then studies its growth rate, preferred orientation and thickness uniformity. The experimental results indicated that with decreasing the distance between target and substrate or increasing sputtering power the growth rate increased; Under different target spacings the Hg1-xCdxTe thin films crystallization characteristic is distinct, the preferred orientation is （111） direction; Increase the distance between the target and substrate can enhance the film thickness uniformity effectively,Under the 75 mm target spacing, the thickness uniformity is better than 7% and 1% at 50 mm×60 mm and 10 min× 10 mm area.

关 键 词：非晶态碲镉汞(a—Hg1-x CdxTe a—MCT) 靶间距 均匀性 磁控溅射 

分 类 号：TN213[电子电信—物理电子学]