助熔剂法生长非线性光学晶体Cd_3Zn_3B_4O_(12)及其性质研究(英文)  

Flux Growth and Optical Properties of the NLO Cd_3Zn_3B_4O_(12) Crystal

作　　者：焦志伟[1,2] 张文林[1] 沈德忠[1] 王晓青[1] 沈光球[1] 

机构地区：[1]清华大学化学系,北京100084 [2]北京矿冶研究总院,北京100070

出　　处：《人工晶体学报》2010年第6期1353-1358,共6页Journal of Synthetic Crystals

基　　金：Supported by the National Natural Science Foundation of China(50590402)

摘　　要：本文以PbO-0.25B2O3为助熔剂,利用顶部籽晶法获得了较大块的Cd3Zn3B4O12单晶。透过率测试结果显示该晶体的紫外截止波长位于310 nm处。利用Kurtz-Perry的方法对晶体的倍频效应进行了测试,结果显示该晶体的粉末倍频效应约为KDP的5倍,且能实现相位匹配。晶体的光损伤阈值约为840 MW(1064 nm,10 ns)。该晶体的热分析结果显示Cd3Zn3B4O12晶体在熔点温度以上会产生分解,这也是阻碍高质量大块Cd3Zn3B4O12晶体生长最主要的因素。Nonlinear optical crystal Cd3Zn3B4O12 was obtained by top seeded solution growth（TSSG） method using PbO-0.25B2O3 as flux.Transmission spectrum shows the UV cutoff for the as-grown crystal is about 310 nm.Second-harmonic generation（SHG） property measured by the Kurtz-Perry method indicates that Cd3Zn3B4O12 crystal could be phase matchable and the SHG efficiency is about 5 times as large as that of KDP.The surface damage threshold of the crystal is 840 MW/cm2 at 1064 nm for 10 ns.Differential thermal analysis confirms that Cd3Zn3B4O12 tends to decompose upon its melting point,which is the major factor constraint to grow high quality Cd3Zn3B4O12 crystal.

关 键 词：Cd3Zn3B4O12 顶端籽晶法 助熔剂 

分 类 号：O78[理学—晶体学]