真空定向凝固法去除硅中铁铝杂质的研究  

Experiment Research on Removing Fe and Al Impurities of Silicon in Vacuum Directional Solidification

作　　者：梅向阳[1,2] 马文会[1,2] 吕国强[1,2] 魏奎先[1,2] 戴永年[1,2] 

机构地区：[1]昆明理工大学材料与冶金工程学院,云南昆明650093 [2]真空冶金国家工程实验室,云南昆明650093

出　　处：《铸造技术》2010年第11期1432-1434,共3页Foundry Technology

基　　金：国家自然科学基金项目(50674050);教育部博士点基金项目(20060674004);新世纪优秀人才支持计划项目(NCET-07-0387)

摘　　要：采用两种不同的原料,进行条件相同的真空定向凝固实验。结果表明,块状工业硅中Fe和Al杂质去除率分别为99.7%和99.6%,酸浸粉料中Fe和Al杂质去除率分别为96.3%和96.7%,粉料杂质含量低反而去除率低,其原因可能是粉料的表面活性大,导致锭料中氧含量过高,形成了大量的氧沉淀。同时对Fe和Al杂质理论计算值与实验值的不同和杂质的去除机理进行了比较和分析。In experiments, metallurgical grade silicon and metallurgical grade silicon power by acid leaching pre-treatment, were purified by our self-assembled directional solidification furnace in the same experimental conditions. According to the results, the removal efficiency of Fe and Al in metallurgical grade silicon is 99.7% and 99.6%, respectively. That of Fe and Al in metallurgical grade silicon power is 96.3% and 96.7%, respectively. The results show that concentration of Fe and Al in metallurgical grade silicon power is lower, but the removal efficiency of Fe and Al is lower. The reasons may be the stronger surface activity of silicon power and higher oxygen concentration. The removing mechanism of metal impurities and the difference between theory value and experiment value were also discussed.

关 键 词：硅 金属杂质 真空定向凝固 晶体生长 

分 类 号：TG250[金属学及工艺—铸造]