长线阵CCD光敏区铝剥离技术  

Lift-off Techniques for Photo-sensitive Area of Long Linear Arrays CCD

作　　者：曾武贤[1] 张振宇[1] 廖乃镘[1] 钟玉杰[1] 袁安波[1] 

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2010年第6期858-860,863,共4页Semiconductor Optoelectronics

摘　　要：介绍了去除长线阵CCD光敏区中金属的两种方法,即湿法腐蚀和剥离,并比较了两者的优劣。分析了曝光和显影时间对剥离图形的影响,比较了在金属化过程中溅射和蒸发对剥离效果的影响。通过优化工艺参数,实现了长线阵CCD光敏区的铝剥离,剥离后光敏区长度为8cm,宽度平均值为6.2μm,线宽均匀性为98.5%。Two methods of wet etching and lift-off used for removing the photo-sensitive area of long linear arrays CCD were introduced in this paper. The advantages and disadvantages of the two methods were compared. The effects of exposure and developing time on the lift-off patterns were analyzed. Different lift-off results caused by sputtering and evaporation were compared. After optimizations of the parameters, the length of photo--sensitive area of 8 cm, the width average of 6.2 μm and the uniformity of 98.5 % were obtained.

关 键 词：CCD 剥离 显影 均匀性 

分 类 号：TN386.5[电子电信—物理电子学]