单轴压应变量子阱红外探测器吸收波长的研究  

Study on the Absorption Wavelength of Quantum Well Infrared Photodetectors Under Uniaxial Strain

作　　者：张家鑫[1] 许丽萍[1] 温廷敦[1] 王忠斌[1] 

机构地区：[1]中北大学理学院物理系

出　　处：《半导体技术》2011年第2期116-118,共3页Semiconductor Technology

摘　　要：研究了单轴压应力对GaAs/AlGaAs/GaAs量子阱红外探测器(QWIP)吸收波长的影响。以量子阱电子干涉方法以及单轴压应力作用下量子阱应变理论为基础,分析了GaAs/AlGaAs/GaAs量子阱导带中子能级与应变的关系。理论上计算了单轴应力下四个QWIP吸收波长与应变的关系。结果表明,E1与E<1>能级之间的吸收波长和E(1)与EF能级之间的吸收波长随应变的增大而减小的幅度比E1与EF能级之间的吸收波长和E(0)与E1能级之间吸收波长随应变的增大减小的幅度大。The influence of the strain under uniaxial stress on the absorption wavelength of the GaAs/AlGaAs/GaA quantum well infrared photodetector（QWIP）were studied.Based on the quantum electronic reflex and interference method and strained quantum well theory under uniaxial stress,the relations of the energy levels and strain in the GaAs/AlGaAs quantum well were analyzed.The calculation results indicate that the QWIP absorption wavelengths of E1to E1and E（1）to EFreduce more obviously than those of E1to E1and E1to EF with strain.This research provides a reference for development and optimization of the QWIP.

关 键 词：量子阱红外探测器 电子干涉模型 单轴应力 应变 吸收波长 

分 类 号：TN215[电子电信—物理电子学]