平面型硅快中子剂量探测器初步研究  

A Priliminary Study of Plane Type Silicon Fast-neutron Dose Detector

作　　者：周春芝[1] 郑宜均[1] 马新华[1] 朱红英[1] 赵建兴[1] 南亲良[1] 崔辉[1] 孙涛[1] 

机构地区：[1]防化研究院,北京102205

出　　处：《辐射防护》2011年第1期34-38,共5页Radiation Protection

摘　　要：介绍了平面型硅快中子剂量探测器,初步探索了探测器的中子剂量响应与PN结长和结宽的关系。基于239Pu-Be中子辐射实验结果,可以得出探测器电压随中子剂量线性变化的结论。对探测器等效电阻进行了计算,给出了测试电流为1~10 mA时平面型硅快中子剂量探测器的电流、电压和中子剂量的关系式。The plane type silicon fast-neutron dose detectors were manufactured.Its response relationship with neutron dose,length of P and N junction,and width of P and N junction were priliminarily studied.Based on the results of 239Pu-Be neutron source response experiments,it was concluded that the voltage of the detectors varies linearly with the neutron dose.And the equivalent resistance of detector was calculated.When test current was in the range 1—10 mA,the relationship between the output（current and voltage） of the plane silicon fast-neutron dose detector and the neutron dose was set up.

关 键 词：硅 探测器 快中子 

分 类 号：TL816.3[核科学技术—核技术及应用]