Effects of P3HT concentration on the performance of organic field effect transistors  

作　　者：姜春霞 程晓曼 吴晓明 杨小艳 尹斌 华玉林 魏军 印寿根 

机构地区：[1]Institute of Material Physics,Tianjin University of Technology [2]Key Laboratory of Display Material and Photoelectric Devices,Ministry of Education of China,Tianjin University of Technology [3]Singapore Institute of Manufacturing Technology,71 Nanyang Drive,Singapore 638075

出　　处：《Optoelectronics Letters》2011年第1期30-32,共3页光电子快报（英文版）

基　　金：supported by the National Natural Science Foundation of China (No.60676051);the Natural Science Fund of Tianjin (No.07JCYBJC12700);the Fund of Key Discipline of Material Physics and Chemistry of Tianjin

摘　　要：Top-contact organic field effect transistors(OFETs) based on poly(3-hexylthiophene)(P3HT) with different concentrations in chloroform(CHCl3) are fabricated.The output characteristics indicate that the P3HT concentration has significant influence on the OFET devices.The performance of the devices firstly is enhanced with increasing the P3HT concentration,and then decreases.The optimized devices with the P3HT concentration of 2 mg/mL show the best performance.The fieldeffect mobility is up to 1.4×10-2 cm2/Vs,the threshold voltage(Vt) is as low as-20 V,and the current on/off ratio(Ion/off) is close to the order of 104.The results suggest that the P3HT aggregation patterns induced by different concentrations can improve the performance of the OFETs.

关 键 词：Concentration (process) 

分 类 号：TN386[电子电信—物理电子学]