两步法制备CIGS薄膜的工艺研究  

Study on Two-Step Process of Preparing CIGS Films

作　　者：廖成[1] 韩俊峰[1] 江涛[1] 谢华木[1] 焦飞[1] 赵夔[1] 

机构地区：[1]北京大学核物理与核技术国家重点实验室,北京100871

出　　处：《无机化学学报》2011年第1期1-5,共5页Chinese Journal of Inorganic Chemistry

基　　金：北京市自然科学基金重点资助项目(No.H030630010120)

摘　　要：本文主要研究了"预制层硒化法"制备铜铟镓硒(CIGS)薄膜的工艺。采用磁控溅射的方式制备In、Cu-Ga金属预制层,然后进行硒化(450℃)以及退火处理(550℃)。SEM结果表明,在室温下溅射沉积In薄膜,并且采用Mo/Cu-Ga/In/Cu-Ga/In的叠层顺序,可以获得平整致密的CIGS薄膜。XRD和SEM测量显示,以单质硒作为硒源,在450℃的硒化之后生成分离的CIS和CGS相,惰性氛围的高温退火可以使分离的CIS和CGS相互融合,形成均一化的CIGS四元化合物。在此基础上,最终完成的CIGS电池光电转换效率为7.5%。The method of ＂selenization of stack element layers＂ to prepare CIGS films was studied in this article.Cu-Ga and In metallic layers were deposited alternatively by magnetic sputtering,which was followed by selenization（450 ℃） and annealing（550 ℃）.The SEM showed that CIGS film appeared smooth and compact when the precursors were sputtered at low substrate temperature and with a sequence of Mo/Cu-Ga/In/Cu-Ga/In.After selenization,the bi-layer film was attained from the SEM pictures.The XRD indicated that double layers were composed of CIS on the top and CGS on the bottom.Moreover,the separate CIS and CGS phases came to the homogeneous CIGS phase if an annealing process in inert atmosphere without selenium was introduced after selenization.Based on these improvements,the CIGS solar cell got a conversion efficiency of 7.5%.

关 键 词：预制层硒化法 铜铟镓硒 金属预制层 退火 

分 类 号：TM914.42[电气工程—电力电子与电力传动] TN305.92[电子电信—物理电子学]