高频电容器充电电源绝缘栅双极晶体管吸收电路  

Absorption circuit of insulated gate bipolar transistor for high-frequency capacitor charging power supply

作　　者：邢达[1,2] 高迎慧[1] 严萍[1] 

机构地区：[1]中国科学院电工研究所,北京100190 [2]中国科学院研究生院,北京100049

出　　处：《强激光与粒子束》2011年第1期239-243,共5页High Power Laser and Particle Beams

基　　金：国家自然科学基金项目(50777061);电力系统及发电设备控制和仿真国家重点实验室开放课题(SKLD09KM15)

摘　　要：高频化是提升电源功率密度的有效方法。为了保护高频电容器充电电源中的开关器件,以串联谐振式电容器充电电源为基础,研究了绝缘栅双极晶体管(IGBT)尖峰电压的产生机理及影响因素。介绍了几种抑制尖峰电压的方法,着重分析了IGBT吸收电路的基本原理,并进行了参数设计。结合仿真软件,对吸收电路的参数进行了优化,将仿真结果和40 kW,50 kHz电容器充电电源样机的实验结果进行对比,验证了提出方案的可行性。Enhancing frequency is an effective method to enhance the power density of a power supply.In order to protect switching devices in the high-frequency capacitor charging power supply（CCPS）,the mechanism and influencing factors of reverse peak voltages were investigated based on the series resonant capacitor-charging power supply.Several methods to inhibit the peak voltages were introduced.Fundamental principles of absorption circuit were analyzed,and circuit parameters were selected and optimized by simulation.Then the feasibility of absorption circuit was verified by the test of a 40 kW/50 kHz capacitor-charging power supply.

关 键 词：电容器充电电源 吸收电路 尖峰电压 绝缘栅双极晶体管 逆变器 高频电源 

分 类 号：TN624[电子电信—电路与系统]