CuInS_2薄膜的制备及光学特性  

Preparation and optical properties of CuInS_2 thin films

作　　者：谢俊叶[1] 李健[1,2] 王延来[1,2] 

机构地区：[1]内蒙古大学物理科学与技术学院,内蒙古呼和浩特010021 [2]内蒙古自治区高等学校半导体光伏技术重点实验室,内蒙古呼和浩特010021

出　　处：《功能材料》2011年第B02期129-132,共4页Journal of Functional Materials

基　　金：内蒙古自治区自然科学基金资助项目(2009MS0109);内蒙古大学‘211工程’创新人才研究生培养资助项目(2-2.2.1);内蒙古大学高层次人才引进项目科研启动资助项目(Z20090144)

摘　　要：真空共蒸发在玻璃衬底上制备CuInS2薄膜。研究不同Cu、In、S元素配比、不同热处理条件对薄膜的结构、化学计量比及光学性能的影响.实验结果给出:在元素配比中S的原子比x选择极为重要(实验选0.2≤x≤2),本实验Cu、In、S最佳原子比为1∶0.1∶1.2。用x(Cu)∶x(In)∶x(S)=1∶0.1∶1.2原子比混合沉积的薄膜,经400℃热处理20min后,得到黄铜矿结构的CuInS2薄膜,沿[112]晶向择优生长,平均晶粒尺寸为38.06nm;薄膜表面致密平整,厚度为454.8nm,表面粗糙度为13nm;薄膜中元素的化学计量比为1∶0.9∶1.5,光学吸收系数达105cm-1,直接光学带隙1.42eV。Vacuum co-evaporation method was utilized to obtain CulnS2 thin films on glass substrates. The effects of different Cu-ln-S mixed ratios and heat-treatment process under various conditions on the structure, stoicbiometry, optical properties of CulnS2 films were studied. Experimental results show that appropriate S atomic ratio, defined as X, is an important factor. In this paper, X value was chosen in range from 0.2 to 2 and the optimal ratio of Cu-In-S is 1 ： 0. 1 ： 1.2. The thin films, which were deposited under the optimal ratio, show chalcopyrite structural of CuInSe and （112） preferred orientation by method of heat-treatment in N2for 20mins at 400℃. The morphology of the thin films after heat treatment is compact and homogeneous. The average grain size, thickness and surface roughness are 38.06, 454.8 and 13nm, respectively. Stoiehiometryofelements in thin film is 1 ： 0. 9 = 1.5. The absorption coefficient is 105cm^-1 and the optical band gap is 1.42eV.

关 键 词：真空共蒸发 CuInS2薄膜 热处理 光学特性 

分 类 号：O484.1[理学—固体物理] O484.41[理学—物理]