氧化石墨结构对电容性能的影响  

The influence of graphite oxide structure on the capacitance properties

作　　者：李林江[1] 胡栋虎[1] 季伶俐[1] 尹婷[1] 李一鸣[1] 贺蕴秋[1] 

机构地区：[1]同济大学材料科学与工程学院,先进土木工程材料教育部重点实验室,上海200092

出　　处：《功能材料》2011年第B02期168-172,共5页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(50672066)

摘　　要：研究了层状结构氧化石墨的片状尺度、结晶态及不同表面官能团含量对其电化学电容性能的影响。以光谱纯和化学纯石墨为原料,采用改进的Hummer法制备氧化石墨(GO),并将部分氧化石墨球磨。用FT-IR和XPS,对氧化石墨表面官能团进行了分析;XRD、FE-SEM和氮气吸附等温线,对氧化石墨结构和形貌进行了分析。利用恒电流充放电、循环伏安和交流阻抗等电化学测试方法研究了氧化石墨结构与电化学电容性能的关系。结果表明,光谱纯氧化石墨制备的电容器比电容较小,为18.8F/g;化学纯石墨制备的氧化石墨球磨后比电容最高,可达到119.7F/g。The paper focuses on the influence of layer structure of graphite oxide, crystallinity, and the content of surface functional groups on the electrochemical capacitance performance. Graphite oxide （GO）samples as electrode materials were prepared by modified Hummer method using spectroscopically pure（SP） graphite and chemically pure（CP） graphite as precursors. The surface chemistry of the resultant GOsamples were studied by XPS and FT-IR spectrum, and the structure of GO samples were tested by XRD, FE-SEM and the nitrogen adsorption at 77K. Their electrochemical properties were investigated by charge-discharge of constant current, cyclic vohammetry, impedance spectrum and so on. The results showed that the specific capacitance of the supercapacitors made by SP GO was lower, and the maximum was 18.8F/g; then CP GO was processed by ball milling, the specific capacitance of the samples raised, and the maximum was 119.7F/g.

关 键 词：氧化石墨 超级电容器 表面官能团 结构 

分 类 号：O646[理学—物理化学]