中高能电子入射单电离He原子过程中屏蔽效应的理论研究  

A theoretical study on screening effects for electron impact single ionization of helium at intermediate and high energies

作　　者：张穗萌[1,2] 吴兴举[1] 陈展斌[2] 杨欢[1] 刘向远[1] 

机构地区：[1]安徽皖西学院数理系原子与分子物理研究所,六安237012 [2]安徽师范大学物理与电子信息学院,芜湖241000

出　　处：《原子与分子物理学报》2010年第6期1105-1113,共9页Journal of Atomic and Molecular Physics

基　　金：安徽省自然科学基金(03406203);安徽省教育厅重大科研项目基金(ZD2007002-1);安徽省高校拔尖人才专项基金

摘　　要：这篇文章用3C和DS3C模型,在不同几何条件下研究了中高能电子入射单电离He原子的三重微分截面(TDCS),将计算结果与早期的测量和最新的绝对测量结果进行了比较;分析了有效电荷对三重微分截面影响.研究表明:在中高入射能下,截面的角分布由binary峰和recoil峰组成,末态电子与电子之间的排斥作用对峰的大小有显著贡献.更进一步,修正后的binary峰的幅值对入射电子能量E_0和散射电子偏角θ_1的变化比较敏感.In this work, for different collision geometry, the triple differential cross sections for electron impact single ionization of Helium at intermediate and high energies are calculated by use of 3C and DS3C models. Results are compared with those of the earlier experimental measurements and the latest absolute measurements. The influence of effective charges on the triple differential cross sections is analyzed. It is seen that the angular distribution consists of two peaks which can be assigned to binary and recoil peaks at intermediate and high energies. The final-state electron - electron repulsion contributes significantly to the magnitude of the peaks. Furthermore, the magnitude of the modified binary peak depends sensitively on incident energies E0 and the scattering angles θ1.

关 键 词：中高能入射电子 有效电荷 屏蔽效应 

分 类 号：O561.5[理学—原子与分子物理]