两套低本底反康普顿HPGeγ谱仪技术指标的比较  

Comparison of Technical Index for Two Sets of Low Background Anti Compton HPGe γ ray Spectrometer

作　　者：韩峰[1] 李天柁[1] 周春林[1] 过惠平[1] 弟宇鸣[1] 

机构地区：[1]第二炮兵工程学院102教研室

出　　处：《核电子学与探测技术》1999年第5期385-389,共5页Nuclear Electronics & Detection Technology

摘　　要：以对比的手法介绍了两套结构相同的低本底反康普顿高纯锗γ谱仪在技术指标、性能上的差别；并通过详实的实验数据，对谱仪处在不同工作状态时的康普顿散射抑制效果作了细致的比较，分析了影响提高峰康比的主要因素。This paper compares the technical index and features of two sets of low background anti Compton HPGe gamma ray spectrometer with same composition, and the restrain effect of Compton scattering at different work state by detailed and accurate data. The author also analyzes the main affecting factors for improving the peak to Compton ratio.

关 键 词：低本底 反康普顿 高纯锗 Γ谱仪 技术指标 

分 类 号：TL817.2[核科学技术—核技术及应用]