国产GaAs/Ge太阳电池在轨行为评价  

EVALUATION OF ORBITAL BEHAVIORS OF NATIONAL GaAs/Ge SOLAR CELLS

作　　者：胡建民[1,2] 吴宜勇[1] 何松[1] 钱勇[3] 陈鸣波[3] 杨德庄[1] 

机构地区：[1]哈尔滨工业大学材料科学与工程学院,哈尔滨150001 [2]哈尔滨师范大学物理与电子工程学院,哈尔滨150025 [3]上海空间电源研究所,上海200233

出　　处：《太阳能学报》2010年第12期1568-1573,共6页Acta Energiae Solaris Sinica

基　　金：国家重点基础研究发展计划项目(200561343);国家自然科学基金项目(11075043);哈尔滨师范大学青年学术骨干资助计划项目(KGB200914)

摘　　要：研究了电子和质子辐照下国产GaAs/Ge太阳电池电学性能退化规律。结果表明:小于200keV质子辐照下国内外GaAs/Ge电池等效损伤系数明显不同,原因是国内外太阳电池结构参数的不同引起的。高能质子和电子辐照下,国内外电池等效损伤系数结果相近,和电池结构关系不大,这是由于高能质子和能够造成电池位移损伤的电子更容易穿透电池,在电池中产生均匀损伤。通过计算透过防护盖片后的带电粒子能谱对JPL(Jet Propulsion Labo-ratory)的等效注量法进行了改进,在地球同步轨道环境下评价了国产GaAs/Ge太阳电池的在轨行为。The degradation of the electrical properties of domestic GaAs/Ge soalr cells was investigated under the irradiations of electrons and protons with various energies. The results indicate that the cell constitution parameters have close relationship with the irradiation damage extent of the solar cells. Compared the results with JPL, the 〈 200keV proton energy at the peak of the relative-damage-coefficient is lower for domestic GaAs/Ge solar cells. This is due to smaller junction depth. However, under the high energy protons and electron irradiation, the relative-damage-coefficients （RDC） show the same characteristics as those from JPL report. This is due to that electrons irradiation can penetrate thoroughly the solar cell and produce homogeneous damage in the cells. Furthermore, as a substitute of JPL model applying the orbital particle spectra and the calculated RDCs of the glass-covered solar cells, a modified JPL EFM to evaluate the orbital performance of the solar cells was used. JPL＇s equivalent injecting amount method was modified through calculating particle （protons and electrons） spectra behind the protected cover-glass and the tested RDCs of the bare solar cells was applied. Thus, the geosynchronous orbital performance of the GaAs/Ge solar cells could be evaluated simpler.

关 键 词：GAAS/GE太阳电池 辐射效应 相对损伤系数 在轨行为 

分 类 号：TK514[动力工程及工程热物理—热能工程]