刻蚀型介质后栅FED器件的研究  

Study of Under-gate FED Base on Etching Dielectric Layer

作　　者：胡利勤[1] 

机构地区：[1]福州大学场致发射显示技术教育部工程研究中心,福州350002

出　　处：《光电子技术》2010年第4期266-269,共4页Optoelectronic Technology

基　　金：国家863计划重大专项(2008AA03A313)

摘　　要：针对后栅型场致发射显示器(FED)器件介质层制作困难的问题,提出采用刻蚀型介质制作后栅型FED器件。该器件采用普通银浆制作栅极电极,以刻蚀型介质制作介质层,采用感光银浆制作阴极电极,并作为介质刻蚀的掩膜层,CNT为阴极发射材料。器件耐压测试结果表明该介质层耐压性能良好,场发射测试结果表明该器件场发射性能优良。Using ordinary silver paste to make gate electrode, etching dielectric to make etching dielectric layer, photosensitive thick-film silver paste to make cathode electrode and as mask, and CNT as cathode emission materials, an under-gate FED device with etching dielectric layer has been developed in order to solve the problem of dielectric layer fabrication. The results showed that the dielectric layer had a good pressure resistance performance, and the FED device had superior field emission properties.

关 键 词：刻蚀型介质 场致发射 后栅型 

分 类 号：TN104[电子电信—物理电子学]