Chemical Bond Formation in C-implanted SiO_2 Films Induced by High-energy Pb-ion Irradiation  

作　　者：A. Benyagoub M. Toulemonde F. Levesque 

机构地区：[1]CIRIL, BP5133, 14070 Caen Cedex 05, France,CIRIL, BP5133, 14070 Caen Cedex 05, France,CIRIL, BP5133, 14070 Caen Cedex 05, France

出　　处：《近代物理研究所和兰州重离子加速器实验室年报：英文版》2004年第1期67-67,共1页IMP & HIRFL Annual Report

基　　金：Supported by National Natural Science Foundation of China (1012552210475102).

摘　　要：SiO2 films were firstly implanted at room temperature (RT) with 120 keV C-ions and then irradiated at RT with 950 MeV Pb ions. The C-ion implantation was performed at the 200 kV heavy ion implanter (IMP, Lanzhou) and the selected implantation doses are 2.0×1017, 5.0×1017 and 8.6×1017 C/cm2. The Pb ion irradiation was carried out at the IRASME (CIRIL-GANIL, Caen) and the irradiation fluence was in the region from 5.0×1011 to 3.8×1012 Pb/cm2. The chemical bond formation in the samples was investigated by using a Spectrum GX IR spectroscopy.SiO2 films were firstly implanted at room temperature （RT） with 120 keV C-ions and then irradiated at RT with 950 MeV Pb ions. The C-ion implantation was performed at the 200 kV heavy ion implanter （IMP, Lanzhou） and the selected implantation doses are 2.0× 1017, 5.0× 1017 and 8.6× 1017 C/cm2. The Pb ion irradiation was carried out at the IRASME （CIRIL-GANIL, Caen） and the irradiation fluence was in the region from 5.0 × 1011 to 3.8 × 1012 Pb/cm2. The chemical bond formation in the samples was investigated by using a Spectrum GX IR spectroscopy.

关 键 词：离子辐照 铅离子 化学键 二氧化硅膜 诱导 高能 SIO2薄膜 离子植入 

分 类 号：O611.3[理学—无机化学]