Characterization of ZnO:In Film Prepared by Radio Frequency Sputtering  

作　　者：Peng Xingping, Wang Zhiguang, Zang Hang, Song yin, Zhang Liqing Sheng Yanbing and Jin Yunfan 

出　　处：《近代物理研究所和兰州重离子加速器实验室年报：英文版》2005年第1期63-64,共2页IMP & HIRFL Annual Report

摘　　要：Wide band-gap semi-conducting compounds are very attractive in recent years because of the intense commercial interest in developing practical short wavelength semiconductor diode lasers for the huge market needs. ZnO has a wide band gap (3. 37 eV) and a large binding energy (60 meV) that allows efficient UV emission from excitation and makes it suitable for UV laser-emitting devices. Indium-doped ZnO (ZnO:In) films have been investigated by many researchers. It has lower electrical conductivity and bet-Wide band-gap semi-conducting compounds are very attractive in recent years because of the intense commercial interest in developing practical short wavelength semiconductor diode lasers for the huge market needs. ZnO has a wide band gap （3. 37 eV） and a large binding energy （60 meV） that allows efficient UV emission from excitation and makes it suitable for UV laser-emitting devices. Indium-doped ZnO （ZnO：In） films have been investigated by many researchers.

关 键 词：溅射薄膜 氧化锌 半导体二极管激光器 射频 表征 宽禁带半导体 紫外激光 导电化合物 

分 类 号：O571.1[理学—粒子物理与原子核物理]