InGaAs/GaAs量子阱双光束发光研究  

Photoluminescence of InGaAs/GaAs with Double Lights

作　　者：窦红飞 陆飞 陈效双 李宁 沈学础 

机构地区：[1]红外物理国家实验室

出　　处：《Journal of Semiconductors》1999年第8期656-661,共6页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：本文报道采用双光束光致发光手段研究 Ｉｎ０．２ Ｇａ０．８ Ａｓ／ Ｇａ Ａｓ 本征样品及 ４ 种不同位置 δ掺杂样品．观察到了由 Ｈｅ Ｎｅ 激光导致的激光强度随附加的第二束激发光（白光）强度变化而演变的现象．实验结果显示，未掺杂样品的光致发光增量较大；单边、双边掺杂样品的光致发光强度变化趋势一致；而阱中中心掺杂、界面掺杂样品随着白光强度的增强出现饱和趋势．The PL of δ\|doped In\-\{0.2\}Ga\-\{0.8\}As/GaAs heterostructures are studied with the double lights.The intensity of PL excited by He\|Ne laser increases with the intensity of the second light(white light).The experimental results show that,the increment of PL intensity for the undoped sample is the largest,and the increment increases similarly between the samples of the doped in one barrier and doped in the both barrier.The saturation appears with the increasing of the intensity of tungsten filament in the samples of the doped in the center well and in the interface.And the increment of the doped in the center well is about 3 times larger than that of the doped in the interface.The transportation of the carriers from the surface to the well,the radiation and non\|radiation are applied to explain the above phenomena well. PACC:7855, 7390

关 键 词：量子阱 双光束发光 砷化镓 砷镓铟化合物 

分 类 号：TN304.23[电子电信—物理电子学] TN304.26