窄线宽可调谐半导体激光器  

NARROW LINE WAVELENGTH TUNABLE SEMICONDUCTOR LASER

作　　者：吕福云[1,2] 刘玉洁[1,2] 袁树忠 魏振兴[1,2] 李加 张光寅[1,2] 

机构地区：[1]南开大学物理科学学院 [2]教育部光学信息技术科学开放研究实验室

出　　处：《南开大学学报（自然科学版）》1999年第2期79-81,共3页Acta Scientiarum Naturalium Universitatis Nankaiensis

基　　金：攀登计划B项目

摘　　要：研究了一种利用光栅弱耦合外腔改善可见光半导体激光器性能的方法，并对６５０ｎｍ半导体激光器进行了实验，外腔镜由一个闪耀光栅构成，通过转动光栅角度，获得了窄线宽单模激光输出，谱线宽度０．１ｐｍ，线宽压窄比达９８００，边模抑制比＞２０。A method using a weak feedback grating external cavity for improve the output characteristics of visible light semiconductor laser is studied and proved to be practical. This experiment is conducted on 650nm semicondutor laser. A blazed grating is used as the external cavity mirror to narrow the linewidth and select frequency. Through turning the grating, laser output with single longitudinal mode and linewidth as narrow as 0.1pm is obtained. The linewidth reduction ratio is 9800. The tuning range is 5nm out of 20nm fluorescent spectrum approximately, and the side mode suppression ratio is ideal.

关 键 词：弱耦合 可调谐半导体激光器 窄线宽 

分 类 号：TN248.4[电子电信—物理电子学]