低能质子辐射硬质硼硅玻璃的模拟计算  

Simulation of radiation effects on hard borosilicate glass by low-energy protons

作　　者：王庆艳[1] 耿洪滨[2] 李兴冀[2] 张中华[1] 何世禹[2] 杨德庄[2] 

机构地区：[1]哈尔滨工业大学航天学院,哈尔滨150001 [2]哈尔滨工业大学空间材料与环境工程重点实验室,哈尔滨150001

出　　处：《哈尔滨工业大学学报》2011年第1期7-11,共5页Journal of Harbin Institute of Technology

基　　金：国家重点基础研究发展计划资助项目(61343010306)

摘　　要：为获得低能质子辐射时硬质硼硅玻璃的损伤特征,利用蒙特卡罗(MC)计算程序——SRIM模拟了入射质子在硬质硼硅玻璃中产生的电离和非电离能损.模拟结果表明:能量为40～200keV的质子损伤主要发生在表面;电离能损是能量损失的主要形式,峰值能量为80keV;非电离能损随能量降低而增大,导致氧、硅和硼等空位型缺陷的产生;空位分布与声子分布及慢化质子的沉积相同,均满足Bragg峰型分布特性.40～200keV质子的电离和非电离能损均会导致硬质硼硅玻璃微观结构的变化.To obtain damage behaviors in hard borosilicate glass, proton-induced ionizing and nonionizing energy loss were calculated by using the SRIM Monte Carlo program. The result shows that for protons with the energy range of 40 -200 keV, the main damage is limited to the surface of borosilicate glass, and the ionizing energy loss, with the peak position of 80keV, is the main type of energy loss. The nonionizing energy loss increases with the decreasing of energy and induces the vacancy production of O, Si and B etc. Both vacancy distribution and phonon distribution, similar to the proton deposition, follow the property of Bragg-type curve. Both the ionizing energy loss and nonionizing energy loss by protons with the energy range of 40 -200 keV can change the microstructure of hard borosilicate glass.

关 键 词：质子辐射 硼硅玻璃 SRIM 能量损失 Bragg峰型 

分 类 号：V524.3[航空宇航科学与技术—人机与环境工程]