硼靶制备技术的研究  

THE PREPARATION OF BORON TARGETS

作　　者：许国基[1] 魏永钦[2] 

机构地区：[1]中国原子能科学研究院核物理研究所,北京102413 [2]中国科学院上海原子核研究所,上海200018

出　　处：《原子能科学技术》1999年第4期357-359,363,共4页Atomic Energy Science and Technology

摘　　要：介绍 Ｂ靶制备技术及其质量厚度测量方法。静电振动、高压电喷和离心沉淀主要用于制备有衬 Ｂ靶，而聚焦重离子束溅射和电子轰击可用来制备自支撑 Ｂ靶和有衬 Ｂ靶。 Ｂ靶的质量厚度用分光光度法和称重法测量。The methods of producing boron films on backings by centrifugal precipitation,electrospraying and electricity vibration are presented. Techniques for preparing self supporting B targets between 0 045 and 0 45 mg/cm 2 from isotopic boron by electron bombardment or focused ion beam sputtering are discussed. Microscope slides coated with betaine or Ni plates are used as substrates from which strong B foils with little residual stress are floated. A spectrophotometer has been used to measure the mass thickness of B targets prepared by electron bombardment.

关 键 词：电子轰击 重离子束溅射 硼靶 薄膜 

分 类 号：O484.1[理学—固体物理] TL503.4[理学—物理]