量子点红外探测器及焦平面阵列的研究进展  

Research Progress on Quantum-dot IR Photodetectors and FPAs

作　　者：邓功荣[1] 史衍丽[1] 余连杰[1] 何雯瑾[1] 

机构地区：[1]昆明物理研究所,云南昆明650223

出　　处：《红外技术》2011年第2期70-74,共5页Infrared Technology

基　　金：国家973重大安全基础研究子课题

摘　　要：量子点红外探测器(QDIP)理论上具有对垂直入射光敏感、暗电流小、载流子寿命长、工作温度和响应率高等优势。目前,研究主要集中在普通量子点红外探测器、阱中点红外探测器(DWELL-QDIP)、隧穿量子点红外探测器(T-QDIP)、Si/Ge量子点红外探测器、二维小孔阵列红外探测器(2DHA-QDIP),国外报道了640×512量子点红外焦平面阵列的热成像,但现有的QDIP还未充分显现出其潜在优势。阐述了正在研究的几种QDIP和未来技术发展的趋势。Quantum dot infrared photodetectors （QDIPs） have theoretical advantages including photoresponse for a normal incidence light, lower dark current, longer carrier lifetime, higher working temperature and responsivity, etc. This review focuses on the introductions of conventional QDIP, quantum dots-in-a-well （DWELL）, tunneling QDIP, Si/Ge QDIP and 2DHA-QDIP. At present, the thermal image of 640X512 QDIP FPA has been reported. However, the state-of-the-art QDIP devices have not fully demonstrated the potential advantages as expected. Thus, the developing trend and the problems hindering the performance of QDIP are also discussed.

关 键 词：量子点红外探测器(QDIP) 焦平面阵列 阱中点QDIP 隧穿QDIP 二维小孔阵列QDIP 

分 类 号：TN216[电子电信—物理电子学]