Sb掺杂Sn_2S_3薄膜的表征及电学特性  

Growth and Electrical Properties of Sb-Doped Sn_2S_3 Films

作　　者：柴燕华[1,2] 李健[1,2] 卢建丽 

机构地区：[1]内蒙古大学物理科学与技术学院,呼和浩特010021 [2]内蒙古高等学校半导体光伏技术重点实验室,呼和浩特010021

出　　处：《真空科学与技术学报》2011年第1期89-94,共6页Chinese Journal of Vacuum Science and Technology

基　　金：内蒙古自治区自然科学基金项目(2009MS0109)

摘　　要：真空蒸发制备Sb掺杂Sn2S3多晶薄膜。研究不同比例Sb掺杂对Sn2S3薄膜的电学、结构、表面形貌、化学组分的影响,实验给出掺Sb5%薄膜经380℃热处理30 min可获得结构良好正交晶系的Sn2S3∶Sb多晶薄膜,薄膜的电阻率从未掺杂时的79kΩ.cm降到23.7Ω.cm,下降了三个数量级。Sn2S3薄膜表面为颗粒状,体内化学计量比Sn/S为1∶1.49,与标准计量比非常接近;掺Sb(5%)后为1∶0.543,Sn过量。Sn和S以Sn2+,Sn4+,S2-形式存在于薄膜中;Sb元素显示正5价,部分Sb5+进入晶格替位Sn4+。The Sb-doped Sn2S3 films were grown by vacuum vapor deposition on glass substrates.The influence of deposition conditions,such as the Sb dosage,annealing temperature and deposition rates,on film growth was experimentally studied.The microstructures and electrical properties of the Sb-doped Sn2S3 films were characterized with X-ray diffraction,X-ray photoelectron spectroscopy and scanning electron microscopy.The results show that the Sb doping and annealing significantly improve the quality of the films.For instance,annealed at 380℃ for 30 min,the polycrystalline Sn2S3 film doped with 5%（at.）.Sb shows an orthogonal crystalline structure;and its resistivity decreased by 3 orders of magnitude,from 79 kΩ·cm of the control sample down to 23.70 Ω·cm.Possible mechanisms were also tentatively discussed.

关 键 词：真空蒸发 热处理 Sn2S3薄膜 Sb掺杂 电学特性 

分 类 号：O484[理学—固体物理]