SiO_2三维光子晶体薄膜的制备与光学特性  

Preparation and Optical Properties of SiO_2 Three-Dimentional Photonic Crystal Thin-Film

作　　者：李燕丽[1] 宋诗莹[1] 

机构地区：[1]天津科技大学理学院,天津300457

出　　处：《天津科技大学学报》2011年第1期40-42,63,共4页Journal of Tianjin University of Science & Technology

基　　金：天津科技大学科学研究基金资助项目(20090221)

摘　　要：利用胶体晶体法沉积SiO2三维光子晶体,利用扫描电子显微镜(SEM)和分光光度计研究该晶体的结构特性和光谱特征,考察颗粒浓度、反应温度对光子禁带的影响.结果表明:随着SiO2颗粒浓度增大,反射强度随之增大,当浓度为1.92%时,反射强度最大,进一步增加浓度反射强度降低,同时光子禁带宽度变窄,禁带位置蓝移;随着温度增加,反射强度增加,禁带位置蓝移.SiO2 three-dimensional photonic crystals were deposited through colloidal crystal method.The crystal structure properties and spectral characteristics were studied by scanning electron microscopy（SEM）and the spectrophotometer,respectively.The influences of different factors such as particle concentrationr,eaction temperature on the photonic band gap were investigated in detail.The results show that the reflection intensity increased with the increase of SiO2 particle concentration until it reached maximum at the concentration of 1.92%.A further increase in SiO2 concentration resulted a decrease in the reflection intensitya,narrower photonic band gap and blue shift in the photonic band gap position.When the temperature was raiseda,n increase of the reflection intensity and blue shift for the photonic band gap position were observedr,espectively.

关 键 词：胶体晶体法 光子晶体 光子禁带 

分 类 号：O431.2[机械工程—光学工程]