Barrier effects on the optoelectronic properties of GaN-based irregular multiple quantum wells for dichromatic white LEDs  

作　　者：CHEN GenXiang LU HuiMin 

机构地区：[1]Institute of Lightwave Technology, Beijing Jiaotong University, Beijing 100044, China

出　　处：《Science China(Technological Sciences)》2011年第1期6-10,共5页中国科学（技术科学英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant No.60777013);the Nature Science Foundation of Beijing (Grant No.4082023);the Excellent Doctoral Science and Technology Innovation Foundation of Beijing Jiaotong University (Grant No.141063522)

摘　　要：The GaN-based irregular multiple quantum well (IMQW) structures for dichromatic white light-emitting diodes (LEDs) are assembled by two different types of QWs emitting complementary blue and yellow light. The electronic and optical properties of the designed GaN-based IMQW structures are investigated in details by fully considering the effects of strain,well-coupling,valence band-mixing and polarization effect by employing a newly modified theoretical model based on the k·p theory. The influences of the height and thickness of the barrier between blue QWs and yellow QWs together with the polarization effect on the optoelectronic properties of GaN-based IMQW structure are analyzed. Numerical results show that the ratio of the two color lights emmited from the IMQW structure for dichromatic white LED can be tuned by changing the height and thickness of the barrier between two types of QWs.

关 键 词：irregular multiple quantum wells GaN-based materials white fight-emitting diodes 

分 类 号：TN215[电子电信—物理电子学] TN312.8