Low voltage organic devices and circuits with aluminum oxide thin film dielectric layer  

作　　者：SHANG LiWei JI ZhuoYu CHEN YingPin WANG Hong LIU Xin HAN MaiXin LIU Ming 

机构地区：[1]Key Laboratory of Nanofabrication and Novel Devices Integration Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

出　　处：《Science China(Technological Sciences)》2011年第1期95-98,共4页中国科学（技术科学英文版）

基　　金：supported by the National Basic Research Program of China ("973" Project)(Grant Nos.2009CB320302,2011CB808404);the Na-tional Natural Science Foundation of China (Grant Nos.60676001,60676008)

摘　　要：Low voltage operating organic devices and circuits have been realized using atomic layer deposition deposited aluminum oxide thin film as dielectric layer. The dielectric film has per unit area capacitance of 165 nF/cm2 and leakage current of 1 nA/cm2 at 1 MV/cm. The devices and circuits use the small-molecule hydrocarbon pentacene as the active semiconductor material. Transistors,inverters,and ring oscillators with operating voltage lower than 5 V were obtained. The mobility of organic field-effect transistors was extracted to be 0.16 cm2/Vs in saturation range,the threshold voltage is 0.3 V,and the on/off current ratio is larger than 105. The gain of inverters is estimated to be 12 at -5 V supply voltage,and the propagation delay is 0.25 ms per stage in 5-stage ring oscillators.

关 键 词：OFET low voltage atomic layer deposition Al2O3 thin film high-k dielectric 

分 类 号：TN451[电子电信—微电子学与固体电子学] TN383.1