A novel structure in reducing the on-resistance of a VDMOS  

作　　者：杨永晖 唐昭焕 张正元 刘勇 王志宽 谭开洲 冯志成 

机构地区：[1]Sichuan Institute of Solid-State Circuits CETC [2]National Laboratory of Analog ICs

出　　处：《Journal of Semiconductors》2011年第2期44-47,共4页半导体学报（英文版）

摘　　要：A novel structure of a VDMOS in reducing on-resistance is proposed. With this structure, the specific on-resistance value of the VDMOS is reduced by 22% of that of the traditional VDMOS structure as the breakdown voltage maintained the same value in theory, and there is only one additional mask in processing the new structure VDMOS, which is easily fabricated. With the TCAD tool, one 200 V N-channel VDMOS with the new structure is analyzed, and simulated results show that a specific on-resistance value will reduce by 23%, and the value by 33% will be realized when the device is fabricated in three epitaxies and four buried layers. The novel structure can be widely used in the strip-gate VDMOS area.A novel structure of a VDMOS in reducing on-resistance is proposed. With this structure, the specific on-resistance value of the VDMOS is reduced by 22% of that of the traditional VDMOS structure as the breakdown voltage maintained the same value in theory, and there is only one additional mask in processing the new structure VDMOS, which is easily fabricated. With the TCAD tool, one 200 V N-channel VDMOS with the new structure is analyzed, and simulated results show that a specific on-resistance value will reduce by 23%, and the value by 33% will be realized when the device is fabricated in three epitaxies and four buried layers. The novel structure can be widely used in the strip-gate VDMOS area.

关 键 词：VDMOS  on-resistance specific on-resistance breakdown voltage epitaxial layer resistance 

分 类 号：TN386.1[电子电信—物理电子学] TN383.1