A CMOS variable gain LNA for UWB receivers  

作　　者：谌斐华 李凌云 多新中 田彤 孙晓玮 

机构地区：[1]Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences [2]Graduate University of the Chinese Academy of Sciences [3]Semiconductor Manufacturing International Corporation

出　　处：《Journal of Semiconductors》2011年第2期91-95,共5页半导体学报（英文版）

基　　金：Project supported by the National High Technology Research and Development Program of China(No.2007AA01Z2B1);the China National Science and Technology Major Special Program(No.2009ZX03006-008);the Shanghai ICC Foundation Program (No.10706200201);the Shanghai Informatization Fund Program

摘　　要：A CMOS variable gain low noise amplifier （LNA） is presented for 4.24.8 GHz ultra-wideband appli- cation in accordance with Chinese standard. The design method for the wideband input matching is presented and the low noise performance of the LNA is illustrated. A three-bit digital programmable gain control circuit is exploited to achieve variable gain. The design was implemented in 0.13μm RF CMOS process, and the die occupies an area of 0.9 mm2 with ESD pads. Totally the circuit draws 18 mA DC current from 1.2 V DC supply, the LNA exhibits minimum noise figure of 2.3 dB, S（1, 1） less than -9 dB and S（2, 2） less than -10 dB. The maximum and the minimum power gains are 28.5 dB and 16 dB respectively. The tuning step of the gain is about 4 dB with four steps in all. Also the input 1 dB compression point is -10 dBm and input third order intercept point （IIP3） is -2 dBm.A CMOS variable gain low noise amplifier （LNA） is presented for 4.24.8 GHz ultra-wideband appli- cation in accordance with Chinese standard. The design method for the wideband input matching is presented and the low noise performance of the LNA is illustrated. A three-bit digital programmable gain control circuit is exploited to achieve variable gain. The design was implemented in 0.13μm RF CMOS process, and the die occupies an area of 0.9 mm2 with ESD pads. Totally the circuit draws 18 mA DC current from 1.2 V DC supply, the LNA exhibits minimum noise figure of 2.3 dB, S（1, 1） less than -9 dB and S（2, 2） less than -10 dB. The maximum and the minimum power gains are 28.5 dB and 16 dB respectively. The tuning step of the gain is about 4 dB with four steps in all. Also the input 1 dB compression point is -10 dBm and input third order intercept point （IIP3） is -2 dBm.

关 键 词：low noise amplifier ULTRA-WIDEBAND variable gain RF CMOS 

分 类 号：TN851[电子电信—信息与通信工程]