Pr^(3+)掺杂SrTiO_3薄膜的聚合物前驱体法制备及发光性能  

Preparation and luminescence properties of Pr^(3+)-doped SrTiO_3 thin films synthesized by polymeric precursor method

作　　者：崔传伟[1] 陈磊[1] 魏贤华[1] 

机构地区：[1]西南科技大学四川省非金属复合与功能材料重点实验室-省部共建国家重点实验室培育基地,四川绵阳621010

出　　处：《电子元件与材料》2011年第3期25-27,共3页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(No.50802078)

摘　　要：采用聚合物前驱体法,在LaNiO3/Si(100)衬底上低温制备了Pr3+掺杂SrTiO3薄膜。用XRD、AFM、PL手段分析了薄膜的晶体结构、表面形貌与发光性能。结果显示,退火温度决定SrTiO3薄膜的晶粒大小和表面形貌,在600℃退火2 h获得的薄膜表面均匀、无裂痕,晶粒大小约为60 nm,表面粗糙度约为2.5 nm。该薄膜样品的发光集中在490,592和616 nm三个波段,主要对应于Pr3+的1D2→3H4和3P0→3H4的能级跃迁。这种高稳定性、水溶液基方法制备的薄膜具有优良的发光性能,有利于其在发光器件中的应用。Pr^3＋-doped SrTiO3 thin films were fabricated on LaNiO3/Si（100） substrate at low annealing temperature by polymeric precursor method. The crystal structure, surface morphology and luminescence properties of prepared thin films were studied by XRD, AFM and PL. The results show that, the grain size and surface morphology of prepared thin films are strongly influenced by the annealing temperature. When the thin film is prepared after annealing at 600 ℃ for 2 h, it is found to be smooth and crack free, with grain size and root-mean-square （RMS） surface roughness value of about 60 nm and 2.5 nm. Photoluminescence emission peaks are observed at 490, 592 and 616 nm, which can be attributed to the energy-level transitions of ^1D2→^3H4 and ^3P0→^3H4 of Pr^3＋. The thin films with good luminescence properties have potential application in the light-emitting device due to the highly stable, water-based solution deposition method.

关 键 词：聚合物前驱体法 Pr^3+掺杂 SRTIO3 薄膜 发光 

分 类 号：TM277[一般工业技术—材料科学与工程]