互注入半导体激光器混沌特性的研究  

Study on chaos characteristics in mutually coupled semiconductor lasers

作　　者：冯亚强[1] 梁丽萍[2] 袁树青[2] 

机构地区：[1]太原理工大学理学院数学系,太原030024 [2]太原理工大学理学院物理系,太原030024

出　　处：《激光技术》2011年第2期196-198,共3页Laser Technology

基　　金：山西省青年科技研究基金资助项目(2008021008)

摘　　要：为了研究互注入半导体激光器产生的混沌带宽及复杂程度,采用互注入半导体激光器速率方程进行了理论分析。结果表明,随着注入系数的增加,混沌的带宽变大,混沌复杂程度变高;偏置电流越大,混沌的带宽越大,时间序列标准差越大,混沌越复杂。这为实现更为复杂的高带宽混沌提供了理论指导。In order to study the chaos complexity degree and bandwidth of mutually coupled semiconductor lasers, numerical analysis was carried out based on their rate equations. The results indicate that the chaotic bandwidth enhances with the increase of injection coefficient, and chaos turns more complicated. The higher the current biases, the larger chaotic bandwidth turns and the more complex the chaos wave is. These results provide theoretic guidance to realize broad bandwidth complex chaos.

关 键 词：非线性光学 混沌 互注入 半导体激光器 

分 类 号：TN248.4[电子电信—物理电子学]