Electronic properties and deep level transient spectroscopy of CdS/CdTe thin film solar cells  

作　　者：黎兵 冯良桓 王钊 郑旭 郑家贵 蔡亚平 张静全 李卫 武莉莉 雷智 曾广根 

机构地区：[1]College of Materials Science and Engineering,Sichuan University

出　　处：《Chinese Physics B》2011年第3期378-381,共4页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant No. 60506004);the National High Technology Research and Development Program of China (Grant No. 2003AA513010)

摘　　要：It is well known that preparing temperatures and defects are highly related to deep-level impurities. In our studies, the CdTe polycrystalline films have been prepared at various temperatures by close spaced sublimation （CSS）. The different preparing temperature effects on CdS/CdTe solar cells and deep-level impurities have been investigated by I-V and C-V measurements and deep level transient spectroscopy （DLTS）. By comparison, less dark saturated current density, higher carrier concentration, and better photovoltaic performance are demonstrated in a 580℃sample. Also there is less deep-level impurity recombination, because the lower hole trap concentration is present in this sample. In addition, three deep levels, Ev ＋ 0.341 eV（H4）, E, ＋ 0.226 eV（HS） and Ec - 0.147 eV（E3）, are found in the 580℃sample, and the possible source of deep levels is analysed and discussed.It is well known that preparing temperatures and defects are highly related to deep-level impurities. In our studies, the CdTe polycrystalline films have been prepared at various temperatures by close spaced sublimation （CSS）. The different preparing temperature effects on CdS/CdTe solar cells and deep-level impurities have been investigated by I-V and C-V measurements and deep level transient spectroscopy （DLTS）. By comparison, less dark saturated current density, higher carrier concentration, and better photovoltaic performance are demonstrated in a 580℃sample. Also there is less deep-level impurity recombination, because the lower hole trap concentration is present in this sample. In addition, three deep levels, Ev ＋ 0.341 eV（H4）, E, ＋ 0.226 eV（HS） and Ec - 0.147 eV（E3）, are found in the 580℃sample, and the possible source of deep levels is analysed and discussed.

关 键 词：CDTE electrical properties deep level transient spectroscopy 

分 类 号：TM914.42[电气工程—电力电子与电力传动]